The Hall effect can indicate positive charge carriers due to anomalous band structures in certain materials.

the verdict

SUPPORTED

the evidence backs this

Recorded sources

3 sources for · 0 against

Counts group repeated records of the same source within each side. They do not measure evidence strength or source independence.

Band structures and multi-band effects in specific materials can indeed cause anomalous Hall behaviors and unexpected signs in Hall coefficients.

The analysis

The retrieved papers provide solid theoretical and experimental evidence showing that anomalous band structures, multi-band effects, and unconventional effective mass dispersion can lead to Hall effect signatures that indicate or accompany positive/negative carrier anomalies in various materials.

Evidence for · 3

Extension of the Aukerman-Willardson Two-Band Hall Coefficient Analysis

Recorded source metadata

R. S. Allgaier. Extension of the Aukerman-Willardson Two-Band Hall Coefficient Analysis. 1965. https://doi.org/10.1063/1.1714505

Aukerman and Willardson analysis and extensions show how multi-band behaviors and concentration effects complicate or reverse Hall coefficient signs.

Source citation format

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More for · 2

Negative magnetoresistance and sign change of the planar Hall effect due to negative off-diagonal effective mass in Weyl semimetals

Recorded source metadata

Akiyoshi Yamada, Y. Fuseya. Negative magnetoresistance and sign change of the planar Hall effect due to negative off-diagonal effective mass in Weyl semimetals. 2021. https://doi.org/10.1103/PhysRevB.105.205207

Paper 4 demonstrates that fine structures of band dispersion, specifically negative off-diagonal effective mass in Weyl semimetals, can cause anomalous galvanomagnetic effects and sign changes.

Source citation format

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

Recorded source metadata

H. Matsuura, Rinya Nishihata, Akinobu Takeshita, Kohei Ogawa, T. Imamura, Kota Takano, Kazuya Okuda, Atsuki Hidaka, S. Ji, K. Eto, K. Kojima, Tomohisa Kato, S. Yoshida, H. Okumura. Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region. 2020. https://doi.org/10.4028/www.scientific.net/MSF.1004.215

Paper 11 reports that heavily Al-doped p-type 4H-SiC epilayers exhibit anomalous negative Hall coefficients even within the band conduction region where positive charge carriers (holes) normally dominate.

Source citation format

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first checked01 Aug 2026

judged → SUPPORTED · 8401 Aug 2026

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